| 摘要 |
According to an embodiment, a nonvolatile memory device includes a plurality of memory cell strings disposed in parallel in a first direction, a bit line and a first contact plug. Each of the memory cell strings extends in a second direction orthogonal to the first direction and includes a plurality of memory cells disposed in parallel in the second direction. The bit line is shared by two adjacent memory cell strings of the memory cell strings, and the first contact plug is connected to the bit line and one of the two adjacent memory cell strings. The bit line includes a first transistor section controlling a current flowing in the one of the adjacent memory cell strings. |
