| 摘要 |
A method of forming a semiconductor device includes forming first and second bumps on a semiconductor substrate, forming first and second penetration electrodes penetrating the semiconductor substrate, forming a first conductive structure making a first electrical path between the first bump and the first penetration electrode, and forming a second conductive structure making a second electrical path between the second bump and the second penetration electrode, the second conductive structure being smaller in resistance value than the first conductive structure. |
