POLISHING COMPOSITION FOR TUNGSTEN-CONTAINING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a chemical-mechanical polishing composition useful in polishing a tungsten-containing substrate.SOLUTION: A chemical-mechanical polishing composition useful in polishing a tungsten-containing substrate comprises a tungsten etchant, an inhibitor of tungsten etching, and water. The inhibitor of tungsten etching is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention also provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of the composition.