| 摘要 |
<p>A film forming device is provided with: a gas supply unit for supplying, to a processing vessel, a source gas and an inert gas; a microwave supply unit which supplies microwave pulses for generating plasma along a processing surface of a material to be processed; and an application unit for applying, to the material to be processed supported inside the processing vessel, negative bias voltage pulses which enlarge a sheathing layer along the processing surface of the material to be processed. A computer of the film forming device controls, in accordance with a film forming program, the application timing of the negative bias voltage pulses and the supply timing of the microwave pulses such that the ratio of the time period in which negative bias voltage pulses are applied in the time period in which one microwave pulse is supplied, to the time period in which one microwave pulse is supplied is at least 0.9.</p> |
