| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for making an SiC single crystal having little threading screw dislocation with comparatively small man-hours and in comparatively short period of time, and the SiC single crystal having little threading screw dislocation.SOLUTION: The method for making an SiC single crystal comprises: a macro step forming step in which a second seed crystal 15 is obtained by forming a macro step Scomprising an SiC single crystal and having a height of more than 70 nm on the (0001) plane of an SiC seed crystal 1; and a crystal growing step in which the macro step is developed on a threading screw dislocation TSD in the second crystal seed 15 by growing an SiC single crystal 10 on the (0001) plane of the second seed crystal 15 in a reaction atmosphere containing silicon (Si) and carbon (C). |
