| 摘要 |
The present disclosure relates to a semiconductor light-emitting element, comprising: a first electrode for supplying to a plurality of semiconductor layers either electrons or electron holes; a second electrode for supplying to the plurality of semiconductor layer electrons or electron holes which are not supplied by the first electrode; a fluorescent material portion, which is provided on the first semiconductor side that is on the side of the growth substrate, for converting light having a first wavelength that is generated from an active layer into light having a second wavelength; and a non-conductive reflective film, which is formed on top of the second semiconductor layer, for reflecting light from the active layer toward the first semiconductor layer side that is on the side of the growth substrate side, wherein the non-conductive reflective layer has a distributed bragg reflector which is designed on the basis of the light that is converted from the fluorescent material portion. |
