SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that allows being easily manufactured and high integration and miniaturization of a memory cell, and to provide a method of manufacturing the same, in a virtual-ground flash memory.SOLUTION: A semiconductor device includes: bit lines 12 provided so as to extend in a semiconductor substrate 10; a charge storage layer 16 provided on the semiconductor substrate 10; word lines 22 provided so as to extend on the charge storage layer 16 and so as to cross the bit lines 12; and a channel region 24 located in the semiconductor substrate 10 directly under the word line 22 and between the bit lines 12. The width W in the width direction of the word lines 22 of the charge storage layer 16 provided on the channel region 24 becomes narrower as going toward the center of the channel region 24 from an end E of the channel region 24 in the extending direction of the word lines 22.