发明名称 |
SYSTEMS AND METHODS FOR TERMINATING JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR DEVICES |
摘要 |
An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction. |
申请公布号 |
US2014070229(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201213610614 |
申请日期 |
2012.09.11 |
申请人 |
STUM ZACHARY MATTHEW;ELASSER AHMED;ARTHUR STEPHEN DALEY;SOLOVIEV STANISLAV I.;LOSEE PETER ALMERN;GENERAL ELECTRIC COMPANY |
发明人 |
STUM ZACHARY MATTHEW;ELASSER AHMED;ARTHUR STEPHEN DALEY;SOLOVIEV STANISLAV I.;LOSEE PETER ALMERN |
分类号 |
H01L29/20;H01L21/768;H01L29/161 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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