发明名称 RESIST COMPOSITION AND PATTERNING PROCESS
摘要 <p>The present invention provides a resist composition which includes a polymeric compound which becomes a base resin which improves alkali-solubility by acid, and a polymer compound which includes repeating units derived from a styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group as a polymer additive. A photoresist film formed using the resist composition of the present invention can reduce the edge roughness (LWR) after development by reducing the generation of outgas from the resist film in EUV exposure and prevent blob defects on the resist film by making the surface of the resist film hydrophilic.</p>
申请公布号 KR20140031807(A) 申请公布日期 2014.03.13
申请号 KR20130105892 申请日期 2013.09.04
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN
分类号 G03F7/004;G03F7/039;G03F7/26;H01L21/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址