METHOD FOR GROWING GRAPHENE

摘要

PROBLEM TO BE SOLVED: To provide a method for growing graphene, allowing manufacture of an epitaxial graphene film with a wide area at low cost.SOLUTION: A metal film is formed on a single crystal silicon. The single crystal silicon and part of the metal film are reacted to cause epitaxial growth of a metallic silicide film on the single crystal silicon. The remainder of the metal film on the metallic silicide film is crystallized to form a single crystal metal film reflecting a plane direction of the metallic silicide film. Epitaxial growth of graphene is caused on the single crystal metal film.