发明名称 IN-SITU ACTIVE WAFER CHARGE SCREENING BY CONFORMAL GROUNDING
摘要 Embodiments of the invention relate generally to semiconductor wafer technology and, more particularly, to the use of conformal grounding for active charge screening on wafers during wafer processing and metrology. A first aspect of the invention provides a method of reducing an accumulated surface charge on a semiconductor wafer, the method comprising: grounding a layer of conductive material adjacent a substrate of the wafer; and allowing a mirrored charge substantially equal in magnitude and opposite in sign to the accumulated surface charge to be induced along the conductive material.
申请公布号 US2014073114(A1) 申请公布日期 2014.03.13
申请号 US201314077517 申请日期 2013.11.12
申请人 GLOBALFOUNDRIES INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CEN CHENG;HERSCHBEIN STEVEN B.;RANA NARENDER;SALEH NEDAL R.;VAID ALOK
分类号 H01L21/326 主分类号 H01L21/326
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