发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device has a vertical channel and includes a first tunnel insulating layer adjacent to a blocking insulating layer, a third tunnel insulating layer adjacent to a channel pillar, and a second tunnel insulating layer between the first and third tunnel insulating layers. The energy band gap of the third tunnel insulating layer is smaller than that of the first tunnel insulating layer and is larger than that of the second tunnel insulating layer. |
申请公布号 |
US2014073099(A1) |
申请公布日期 |
2014.03.13 |
申请号 |
US201313967492 |
申请日期 |
2013.08.15 |
申请人 |
PARK KWANGMIN;KIM BYONGJU;YUN JUMI;AHN JAEYOUNG |
发明人 |
PARK KWANGMIN;KIM BYONGJU;YUN JUMI;AHN JAEYOUNG |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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