| 摘要 |
There is provided an MOSFET having a large current density, which can be mixed with a logic circuit, and is used in a circuit that conducts the operation of applying a negative voltage to a drain electrode. An electrode surrounded by an insulating film is formed, at an intermediate position of a gate electrode and a drain of the MOSFET formed on an SOI substrate having a drain electrode applied with a negative voltage, and the electrode is connected to the ground to prevent a withstand voltage from being lowered which is caused by an increase in impurity concentration of a drift region. A drift resistance is lowered to improve the current density. |
