SEMICONDUCTOR HETEROSTRUCTURE AND PHOTOVOLTAIC CELL INCLUDING SUCH A HETEROSTRUCTURE

摘要

The invention relates to a heterostructure including a first region (R1) made of a first n-doped semiconductor material, a second region (R2) made of a second p-doped semiconductor material and, between said first and second regions, a type-II superlattice (SR) made up of an alternation of layers (C1, C2) of a third and fourth semiconductor material, said layers being thin enough for the carriers to be displaced inside said superlattice, forming at least one electron mini-band (MBe) and one hole mini-band (MBh), the interfaces between the first region and the superlattice, between the layers of the superlattice and between the superlattice and the second region being mutually parallel. The invention also relates to a photovoltaic cell including such a heterostructure as an active element. The invention further relates to a solar panel including a combination of such photovoltaic cells.