| 摘要 |
The plasma processing method is provided to focus plasma on the substrate edge region and to remove easily the metal thin film like the Cu layer of the edge region by increasing the temperature of the chamber including the substrate support. The plasma-etching apparatus comprises the chamber(100). The shield part(200) divides the inside of chamber into the reaction space(A) and the release space(D). The shielding part(300) is positioned in the reaction space of the inner side of the shield part. The plasma generator part(400) is positioned in the release space of the outer side of shield part. The substrate support portion(500) is prepared in the shield bottom side. The Faraday shield(600) is positioned between the shield and the plasma generator part. |
