Microelectronic device isolation trenches overflowing under an active area

摘要

The device (100) has a substrate (102) including a semiconductor layer (108) positioned on a dielectric layer (106), where the dielectric layer is positioned on another semiconductor layer (104). An isolation trench (114) is made through the former semiconductor layer, the dielectric layer and a part of the thickness of the latter semiconductor layer. The trench including silicon dioxide delimits an active area (110) of the device, where a portion (118) of the silicon dioxide of the trench is positioned under the active area in a part of the thickness of the latter semiconductor layer. An independent claim is also included for a method for producing a microelectronic device.