发明名称 DEVICE FOR DETECTING THE SPECTRUM OF ELECTROMAGNETIC RADIATION WITHIN A SPECIFIED WAVELENGTH RANGE
摘要 <p>#CMT# #/CMT# The spectrometer (10) has a perforated mask (32) including windows (36), which are overlappingly arranged with other windows (22) of another perforated mask (20). Oppositely lying edges of the overlapping windows define a size of a radiation discharge opening (42) for passing an electromagnetic radiation with a predefined wavelength range to a photo diode (30) e.g. infrared-diode, which is arranged below the opening. The discharge opening with the size associated to interested wavelengths is provided for recording an intensity of the radiation in each interested wavelength with the range. #CMT#USE : #/CMT# Solid body spectrometer for recording a spectrum of an electromagnetic radiation within a predefined wavelength range. Uses include but are not limited to fuel quality monitoring, a biosensor, a DNA detector, a particle counter, an infrared spectrometer, a laser spectrometer, a microwave spectrometer, a multi-color bar code, a micro optic demodulation for frequency multiplexed optical signals, a frequency selective process for a light barrier to improve a signal-to-noise ratio, for detection of foodstuffs and feedstuffs affected with microbes, and for determining moisture content in feedstuffs in agrarian, agriculture, chemical, biochemical, medical, forensic, glass and foodstuff industries. #CMT#ADVANTAGE : #/CMT# The spectrometer easily records the spectrum of the electromagnetic radiation within the predefined wavelength range by process steps of semiconductor device manufacturing. The device is cost-effectively manufactured as a mass product. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a cross-sectional view of a part of a solid body spectrometer. 10 : Solid body spectrometer 12 : Fragile p-doped silicon semiconductor substrate 20, 32 : Perforated masks 22, 36 : Windows 30 : Photo diode 42 : Radiation discharge opening #CMT#INORGANIC CHEMISTRY : #/CMT# The perforated masks contain a material such as silicidized polycrystalline silicon.</p>
申请公布号 EP2705535(A1) 申请公布日期 2014.03.12
申请号 EP20120718269 申请日期 2012.05.07
申请人 ELMOS SEMICONDUCTOR AG 发明人 BURCHARD, BERND;BUDDE, WOLFRAM
分类号 H01L27/146;G01J3/28;G02B5/18;H01L31/0216 主分类号 H01L27/146
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