发明名称 CMOS IMAGE SENSOR AND OPERATION METHOD THEREOF
摘要 A CMOS image sensor and an operation method thereof are disclosed. According to an embodiment of the present invention, the CMOS image sensor includes a current-voltage conversion transistor and a photodiode and the current-voltage conversion transistor can be maintained in a state capable of generating a gate induction drain leakage current while the photodiode absorbs light and generates a light current. The gate induction drain leakage current can be induced from the current-voltage conversion transistor as much as the photocurrent of the photodiode by connecting the photodiode with the current-voltage transistor. The current-voltage conversion transistor is able to generate a voltage which corresponds to the gate induction drain leakage current in a drain.
申请公布号 KR20140030978(A) 申请公布日期 2014.03.12
申请号 KR20120097820 申请日期 2012.09.04
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 YANG, KYOUNG HOON;BAEK, IN KYU
分类号 H04N5/355;H04N5/374 主分类号 H04N5/355
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