发明名称 |
CMOS IMAGE SENSOR AND OPERATION METHOD THEREOF |
摘要 |
A CMOS image sensor and an operation method thereof are disclosed. According to an embodiment of the present invention, the CMOS image sensor includes a current-voltage conversion transistor and a photodiode and the current-voltage conversion transistor can be maintained in a state capable of generating a gate induction drain leakage current while the photodiode absorbs light and generates a light current. The gate induction drain leakage current can be induced from the current-voltage conversion transistor as much as the photocurrent of the photodiode by connecting the photodiode with the current-voltage transistor. The current-voltage conversion transistor is able to generate a voltage which corresponds to the gate induction drain leakage current in a drain. |
申请公布号 |
KR20140030978(A) |
申请公布日期 |
2014.03.12 |
申请号 |
KR20120097820 |
申请日期 |
2012.09.04 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
YANG, KYOUNG HOON;BAEK, IN KYU |
分类号 |
H04N5/355;H04N5/374 |
主分类号 |
H04N5/355 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|