发明名称 |
Resist pattern-forming method |
摘要 |
A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent. |
申请公布号 |
US8669042(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US201213434851 |
申请日期 |
2012.03.30 |
申请人 |
ANNO YUSUKE;MORI TAKASHI;SAKAKIBARA HIROKAZU;FURUKAWA TAIICHI;TAKANASHI KAZUNORI;TANAKA HIROMITSU;MINEGISHI SHIN-YA;JSR CORPORATION |
发明人 |
ANNO YUSUKE;MORI TAKASHI;SAKAKIBARA HIROKAZU;FURUKAWA TAIICHI;TAKANASHI KAZUNORI;TANAKA HIROMITSU;MINEGISHI SHIN-YA |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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