发明名称 |
Diffusion region routing for narrow scribe-line devices |
摘要 |
The present disclosure provides a method of making an integrated circuit (IC) device. The method includes forming a first IC feature and a second IC feature in a semiconductor substrate, the first and second IC features being spaced from each other and separated by a scribe region; forming, in the semiconductor substrate, a doped routing feature at least partially within the scribe region and configured to connect the first and second IC features; forming a multilayer interconnect (MLI) structure and an interlayer dielectric (ILD) on the semiconductor substrate, wherein the MLI is configured to be absent within the scribe region; and etching the ILD and the semiconductor substrate within the scribe region to form a scribe-line trench. |
申请公布号 |
US8669641(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US201113164523 |
申请日期 |
2011.06.20 |
申请人 |
HSIEH MING-CHANG;CHEN HUNG-LIN;YU HSIU-MEI;LAN CHIN KUN;LEE DONG-LUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH MING-CHANG;CHEN HUNG-LIN;YU HSIU-MEI;LAN CHIN KUN;LEE DONG-LUNG |
分类号 |
H01L21/78 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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