发明名称 |
Resistive memory device and method of writing data using multi-mode switching current |
摘要 |
A method of writing data in a resistive memory device includes performing a test operation to distinguish normal memory cells from weak memory cells, during a write operation directed to normal memory cells using a write current and during a weak write operation directed to weak memory cells using a higher write current. |
申请公布号 |
US8670269(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US201213609330 |
申请日期 |
2012.09.11 |
申请人 |
KWON OH-SEONG;KIM JIN-HYUN;CHOI HYUN-HO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON OH-SEONG;KIM JIN-HYUN;CHOI HYUN-HO |
分类号 |
G11C11/00;G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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