发明名称 |
Crosstalk improvement through P on N structure for image sensor |
摘要 |
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer. |
申请公布号 |
US8669133(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US20100780625 |
申请日期 |
2010.05.14 |
申请人 |
CHANG CHUNG-WEI;LIU HAN-CHI;KO CHUN-YAO;WUU SHOU-GWO;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHUNG-WEI;LIU HAN-CHI;KO CHUN-YAO;WUU SHOU-GWO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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