METHOD FOR SEMICONDUCTOR DEVICE INCLUDING CAPACITORS

摘要

Provided is a method for manufacturing semiconductor device including a capacitor. The method for manufacturing semiconductor device includes forming a mold structure on a lower structure, forming a plurality of holes for exposing the lower structure by patterning the mold structure, forming a protection layer which covers the inner wall of the mold structure exposed to the holes, forming the lower electrodes in the holes where the protection layer is formed, exposing the protection layer by removing the mold structure, exposing the sidewalls of the lower electrodes by removing the protection layer, and forming a dielectric layer which successively covers the surface of the lower electrodes and the upper electrode.