MAGNETIC MEMORY DEVICE

摘要

Provided is a magnetic memory device. The magnetic memory device includes a first reference magnetic layer which is formed on a substrate, a second reference magnetic layer which is formed on the first reference magnetic layer, a free layer which is formed between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer which is formed between the first reference magnetic layer and the free layer, and a second tunnel barrier layer which is formed between the second reference magnetic layer and the free layer. The first reference magnetic layer, the second reference magnetic layer, and the free layer include magnetization directions which are substantially vertical to the upper side of the substrate. The resistance-area product (RA) value of the first tunnel barrier layer is larger than the RA value of the second tunnel barrier layer.