| 摘要 |
A nonvolatile semiconductor memory device according to an embodiment comprises: a memory cell array including a plurality of memory cells provided at each of intersections of a plurality of first lines and a plurality of second lines; and a control circuit applying a selected first line voltage to a selected first line, an adjacent unselected first line voltage which is larger than the selected first line voltage to an adjacent unselected first line, and an unselected first line voltage which is larger than the adjacent unselected first line voltage to an unselected first line, and applying a selected second line voltage which is larger than the selected first line voltage to a selected second line and an unselected second line voltage which is smaller than the selected second line voltage to an unselected second line. |
