| 摘要 |
<p>The present invention relates to a semiconductor device and a fabricating method thereof. According to one embodiment of the present invention, the semiconductor device includes: a semiconductor substrate having a trench; a first electrode located in the lower inner part of the trench and having a non-flat surface on the upper part thereof; an insulating layer located in the upper part of the first electrode and the sidewall of the trench; and a second electrode located in the upper part of the first electrode in the trench and having a non-flat surface. The second electrode is characterized by a gradually tilted central part.</p> |
