| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which can inhibit decrease in channel mobility of a SiC-MOSFET and obtain a SiC-MOSFET of low-contact resistance.SOLUTION: A manufacturing method of a silicon carbide semiconductor device including a plurality of transistor units each composed of a second conductivity type first semiconductor region provided in an upper layer part of a first conductivity type silicon carbide layer, a first conductivity type second semiconductor region provided in a surface of the first semiconductor region, a gate insulation film having a first surface which contacts the first and second semiconductor regions and a surface of the silicon carbide layer, and a gate electrode provided so as to contact a second surface of the gate insulation film opposite to the first surface comprises: forming an interlayer insulation film so as to bridge the adjacent transistor units, and light of a particular wavelength is locally absorbed at a bottom face of the opening by using an opening formed between the adjacent transistor units as a micro-cavity to locally raise the temperature of the place. |
