发明名称 |
THIN FILM DIELECTRIC LAYER FORMATION |
摘要 |
A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A second inorganic thin film dielectric material layer is deposited on the treated surface of the first inorganic thin film dielectric material layer using an atomic layer deposition process. |
申请公布号 |
US2014065838(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213600264 |
申请日期 |
2012.08.31 |
申请人 |
ELLINGER CAROLYN R.;LEVY DAVID H.;NELSON SHELBY F. |
发明人 |
ELLINGER CAROLYN R.;LEVY DAVID H.;NELSON SHELBY F. |
分类号 |
H01L21/3105;H01L21/316;H01L21/318 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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