发明名称 THIN FILM DIELECTRIC LAYER FORMATION
摘要 A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A second inorganic thin film dielectric material layer is deposited on the treated surface of the first inorganic thin film dielectric material layer using an atomic layer deposition process.
申请公布号 US2014065838(A1) 申请公布日期 2014.03.06
申请号 US201213600264 申请日期 2012.08.31
申请人 ELLINGER CAROLYN R.;LEVY DAVID H.;NELSON SHELBY F. 发明人 ELLINGER CAROLYN R.;LEVY DAVID H.;NELSON SHELBY F.
分类号 H01L21/3105;H01L21/316;H01L21/318 主分类号 H01L21/3105
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