发明名称 IN-GA-ZN OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
摘要 <p>A sputtering target including an oxide A and InGaZnO4, the oxide A having a diffraction peak in regions A to K at 2θ=7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5°, 56.5° to 59.5°, 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, and 62.7° to 66.7°.</p>
申请公布号 KR20140027240(A) 申请公布日期 2014.03.06
申请号 KR20137029569 申请日期 2012.04.27
申请人 IDEMITSU KOSAN CO., LTD. 发明人 SUNAGAWA MISA;ITOSE MASAYUKI;NISHIMURA MAMI;KASAMI MASASHI
分类号 C23C14/34;C04B35/00;H01B5/14;H01L21/363 主分类号 C23C14/34
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