| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic apparatus capable of improving interface properties between a shallow trench isolation (STI) region and a corresponding semiconductor device, and a method for manufacturing the same.SOLUTION: An electronic apparatus can comprise a substrate, a buried type oxide (BOX) layer on the substrate, at least one of semiconductor device on the BOX layer, and at least one of STI region adjacent to at least one of semiconductor device and in the substrate. At least one of STI region can comprise a nitride layer defining a sidewall surface of the substrate and lining a bottom part of the sidewall surface, an oxide layer lining an upper part of the sidewall surface above the bottom part, and an insulating material in the nitride layer and the oxide layer. |
