发明名称 |
PIEZOELECTRIC THIN-FILM ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element having excellent surface morphology of a piezoelectric thin film.SOLUTION: A piezoelectric thin film element includes: a substrate 1; a lower electrode layer 2 formed on the substrate 1; a piezoelectric thin-film buffer layer 3 formed on the lower electrode layer 2 and having granular crystals; a piezoelectric thin-film layer 4 formed on the piezoelectric thin-film buffer layer 3 and having columnar crystals; and an upper electrode layer formed on the piezoelectric thin-film layer 4. The piezoelectric thin-film buffer layer 3 has the granular crystals that are generated by crystals of potassium sodium niobate grown from the lower electrode layer 2 being interrupted. In the granular crystals, a number of grain boundaries exist in in-plane direction, compared to the columnar crystals. |
申请公布号 |
JP2014042047(A) |
申请公布日期 |
2014.03.06 |
申请号 |
JP20130212725 |
申请日期 |
2013.10.10 |
申请人 |
MURATA MFG CO LTD |
发明人 |
IKEUCHI SHINSUKE;YAMAMOTO KANSHO |
分类号 |
H01L41/187;H01L41/29;H01L41/316;H01L41/319 |
主分类号 |
H01L41/187 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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