发明名称 PIEZOELECTRIC THIN-FILM ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element having excellent surface morphology of a piezoelectric thin film.SOLUTION: A piezoelectric thin film element includes: a substrate 1; a lower electrode layer 2 formed on the substrate 1; a piezoelectric thin-film buffer layer 3 formed on the lower electrode layer 2 and having granular crystals; a piezoelectric thin-film layer 4 formed on the piezoelectric thin-film buffer layer 3 and having columnar crystals; and an upper electrode layer formed on the piezoelectric thin-film layer 4. The piezoelectric thin-film buffer layer 3 has the granular crystals that are generated by crystals of potassium sodium niobate grown from the lower electrode layer 2 being interrupted. In the granular crystals, a number of grain boundaries exist in in-plane direction, compared to the columnar crystals.
申请公布号 JP2014042047(A) 申请公布日期 2014.03.06
申请号 JP20130212725 申请日期 2013.10.10
申请人 MURATA MFG CO LTD 发明人 IKEUCHI SHINSUKE;YAMAMOTO KANSHO
分类号 H01L41/187;H01L41/29;H01L41/316;H01L41/319 主分类号 H01L41/187
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