| 摘要 |
PROBLEM TO BE SOLVED: To improve electromigration (EM) resistance at a solder joint section.SOLUTION: There are provided: a characteristic structure of an interface alloy layer capable of improving electromigration (EM) resistance at a solder joint section; and a characteristic method for forming the structure. Specifically, a controlled interface alloy layer is provided on both sides of a solder joint section, as the characteristic structure. In order to form the structure, aging (left in a high-temperature state) is performed until Cu3Sn as the interface alloy layer has a thickness of 1.5 μm or more. |
