发明名称 |
SEMICONDUCTOR BUFFER STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The first nitride semiconductor layer has a first gallium composition ratio, the second nitride semiconductor layer has a second gallium composition ratio different from the first metal composition ratio, and the third layer has a third gallium composition ratio greater than at least one of the first gallium composition ratio or the second gallium composition ratio. The structure may also include a fourth layer for reducing tensile stress or increasing compression stress experienced by at least the second nitride semiconductor layer. |
申请公布号 |
US2014061663(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201313837460 |
申请日期 |
2013.03.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM JUN-YOUN;KIM JOO-SUNG;YANG MOON-SEUNG |
分类号 |
H01L29/20;H01L21/02 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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