发明名称 METHODS OF TREATING A SEMICONDUCTOR LAYER
摘要 Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
申请公布号 WO2014036494(A1) 申请公布日期 2014.03.06
申请号 WO2013US57681 申请日期 2013.08.30
申请人 FIRST SOLAR MALAYSIA SDN. BHD.;FOUST, DONALD FRANKLIN;CAO, HONGBO;CLARK, LAURA ANNE;GARBER, ROBERT ANDREW;FELDMAN-PEABODY, SCOTT DANIEL;METZGER, WYATT KEITH;SHAN, YINGHUI;SHUBA, ROMAN 发明人 FOUST, DONALD FRANKLIN;CAO, HONGBO;CLARK, LAURA ANNE;GARBER, ROBERT ANDREW;FELDMAN-PEABODY, SCOTT DANIEL;METZGER, WYATT KEITH;SHAN, YINGHUI;SHUBA, ROMAN
分类号 H01L21/00 主分类号 H01L21/00
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