| 摘要 |
In a thermoelectric conversion device, support substrates (13, 14) and electrodes (11, 12) formed on the support substrates, and thermoelectric conversion parts (7, 10) that are formed on electrodes and contain semiconductor glass are provided. The semiconductor glass is non-lead glass containing vanadium, and the electrodes contain any of Al, Ti, nitride of Ti, W, nitride of W, silicide of W, Ta, Cr, and Si. This configuration makes it possible to provide a device structure that is obtained by using a composite material produced by a low-cost producing method and having high thermoelectric conversion properties, and also that solves problems intrinsic to such a composite material, and as a result, this makes it possible to provide a low-cost, high-performance, and highly-reliable thermoelectric conversion device. |
