| 摘要 |
A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlxGa1-xN (0@x@0.05) and AlyGa1-yN (0<y@1 and x<y) layers. Only the AlyGa1-yN layer in the alternating layer is doped with an acceptor. |
