发明名称 |
OXYGEN SCAVENGING SPACER FOR A GATE ELECTRODE |
摘要 |
At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a oxygen-scavenging-material-including gate spacer. The oxygen-scavenging-material-including gate spacer can be a scavenging-nanoparticle-including gate spacer or a scavenging-island-including gate spacer. The scavenging material is distributed within the oxygen-scavenging-material-including gate spacer in a manner that prevents an electrical short between a gate electrode and a semiconductor material underlying a gate dielectric. The scavenging material actively scavenges oxygen that diffuses toward the gate dielectric from above, or from the outside of, a dielectric gate spacer that can be formed around the oxygen-scavenging-material-including gate spacer. |
申请公布号 |
US2014065783(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201314073159 |
申请日期 |
2013.11.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHUDZIK MICHAEL P.;NAIR DELEEP R.;NARAYANAN VIJAY;RADENS CARL J.;SHAH JAY M. |
分类号 |
H01L29/66;H01L21/28;H01L21/283 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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