RESISTIVE RANDOM ACCESS MEMORY, CONTROLLING METHOD AND MANUFACTURING METHOD THEREFOR

摘要

A resistive random access memory (RRAM), a controlling method for the RRAM, and a manufacturing method therefor are provided. The RRAM includes a first electrode layer; a resistance switching layer disposed on the first electrode layer; a diffusion metal layer disposed on the resistance switching layer; and a second electrode layer disposed on the diffusion metal layer, wherein at least one extension electrode is disposed in the resistance switching layer.