发明名称 |
DOPING OF COPPER WIRING STRUCTURES IN BACK END OF LINE PROCESSING |
摘要 |
A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy material; and forming a dielectric layer over the ILD layer and the copper alloy material; wherein the copper alloy material serves an adhesion interface layer between the copper line and the dielectric layer. |
申请公布号 |
US2014061914(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213599256 |
申请日期 |
2012.08.30 |
申请人 |
DYER THOMAS W.;EDELSTEIN DANIEL C.;KO TZE-MAN;SIMON ANDREW H.;TSENG WEI-TSU;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DYER THOMAS W.;EDELSTEIN DANIEL C.;KO TZE-MAN;SIMON ANDREW H.;TSENG WEI-TSU |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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