SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate, a device isolation layer defining one or more active regions at the substrate, and one or more gate lines buried in the substrate. Each of the gate lines comprises a first portion on the device isolation layer and a second portion on an active region of the active regions. A top surface of the first portion is lower than a top surface of the second portion.