| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved light extraction efficiency and brightness.SOLUTION: A semiconductor light-emitting element includes a light-emitting layer 40, a first electrode 20 including a reflective metal layer, an insulating layer 90 having an opening, a first-conductivity-type layer 37, a second-conductivity-type layer 50, and a second electrode 60. The first-conductivity-type layer is provided on the first electrode and under the light-emitting layer, and is composed of a group III-V compound semiconductor having a larger band gap energy than the light-emitting layer. Moreover, the first-conductivity-type layer includes a first contact layer 32, a composition inclined layer 31, and a first cladding layer 29. The second-conductivity-type layer is provided between the light-emitting layer and the second electrode, and includes a second current diffusion layer 54 and a second contact layer 56. The second electrode has a pad portion and thin line portions going to the outside of the pad and extending on the second contact layer. The thickness of the first contact layer is thinner than that of the current diffusion layer. |
