| 摘要 |
The present invention relates to a semiconductor memory device and an operation method of the same which comprises the steps of: programming a first memory cell adjacent to a drain select transistor; programming memory cells disposed between a second memory cell adjacent to a source select transistor and the first memory cell; and programming the second memory cell. [Reference numerals] (AA) Start; (BB) End; (S401) Program memory cells adjacent to a DST; (S402) Program memory cells except for memory cells adjacent to an SST among remaining memory cells; (S403) Program the memory cells adjacent to the SST |
