A method for manufacturing a light emitting device according to one embodiment of the present invention includes the steps of: forming a light emitting structure which includes a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate; forming a plurality of nanostructures on the second semiconductor layer; forming a first uneven part by etching the second semiconductor layer using the nanostructures as a mask; reducing the size of the nanostructures; and forming a second uneven part with a stepped structure by etching the second semiconductor layer with the first uneven part using the nanostructures with the reduced size as a mask.
申请公布号
KR20140026092(A)
申请公布日期
2014.03.05
申请号
KR20120093056
申请日期
2012.08.24
申请人
LG INNOTEK CO., LTD.;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION