| 摘要 |
A piezoelectric device (10) is manufactured in which the material of a supporting substrate (12, 13) can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate (1) to form an ion-implanted portion (2). A temporary supporting substrate (3,4) is formed on the ion-implanted surface (A) of the piezoelectric substrate. The temporary supporting substrate includes a layer (3) to be etched and a temporary substrate (4). The piezoelectric substrate (1) is then heated to be divided at the ion-implanted portion (2) to form a piezoelectric thin film (11). A supporting substrate (12,13) is then formed on the piezoelectric thin film (11). The supporting substrate includes a dielectric film (12) and a base substrate (13). The temporary supporting substrate (3,4) is made of a material that can produce a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film smaller than the thermal stress at the interface between the supporting substrate (12,13) and the piezoelectric thin film (11). |
