Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof

摘要

A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The first nitride semiconductor layer has a first gallium composition ratio, the second nitride semiconductor layer has a second gallium composition ratio different from the first metal composition ratio, and the third layer has a third gallium composition ratio greater than at least one of the first gallium composition ratio or the second gallium composition ratio. The structure may also include a fourth layer for reducing tensile stress or increasing compression stress experienced by at least the second nitride semiconductor layer.