| 摘要 |
The present invention concerns a magnetic tunnel junction (MTJ) -based magnetic random access memory (MRAM) cell (1) with a thermally assisted switching (TAS) writing procedure comprising a magnetic tunnel junction (2) formed from a ferromagnetic storage layer (21a) having a magnetization that is adjustable above a high temperature threshold, a reference layer (23) having a fixed magnetization, and an insulating layer (22) being disposed between the storage and reference layers (21 a, 23); characterized in that the junction (2) has an anisotropic shape, and wherein the ferromagnetic storage layer (21 a) has a magnetocrystalline anisotropy being oriented essentially perpendicular to the long axis of the anisotropic shape of the junction (2). The TAS MTJ-based MRAM cell of the present invention limits advantageously the effects of the junction shape anisotropy dispersion coming from the fabrication process and has a lower power consumption in comparison with conventional MTJ-based MRAM and TAS MTJ-based MRAM cells of the prior art. |
