A COMPOSITION FOR ORGANIC THIN-FILM TRANSISTOR GATE INSULATORS AND A METHOD FOR MAKING THE SAME

摘要

The present invention relates to a gate insulation film composition for an organic thin film transistor and a manufacturing method thereof. According to one embodiment of the present invention, the gate insulation film composition for an organic thin film transistor including a metal precursor modified by a compound containing a (meth)acrylate group has an improved dielectric constant and frequency characteristics and reduces the leak of a current. An insulation film composition includes: an organic-inorganic hybrimer of compounds providing a (meth)acrylate group or its hydrolyzate; and an organic solvent. [Reference numerals] (AA) Dielectric constant; (BB) Example 7-1; (CC) Example 6-1; (DD) Example 5-1