发明名称 Metal-oxide-semiconductor capacitor
摘要 A MOS capacitor includes a substrate, a p-type MOS (pMOS) transistor positioned on the substrate, and an n-type MOS (nMOS) transistor positioned on the substrate. More important, the pMOS transistor and the nMOS transistor are electrically connected in parallel. The MOS transistor further includes a deep n-well that encompassing the pMOS transistor and the nMOS transistor.
申请公布号 US8664705(B2) 申请公布日期 2014.03.04
申请号 US201213481963 申请日期 2012.05.29
申请人 CHIU KAI-LING;CHENG CHAO-SHENG;TSENG CHIH-YU;LIU YU-JEN;UNITED MICROELECTRONICS CORP. 发明人 CHIU KAI-LING;CHENG CHAO-SHENG;TSENG CHIH-YU;LIU YU-JEN
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
主权项
地址