发明名称 |
On-die parametric test modules for in-line monitoring of context dependent effects |
摘要 |
An integrated circuit (IC) die has an on-die parametric test module. A semiconductor substrate has die area, and a functional IC formed on an IC portion of the die area including a plurality of circuit elements configured for performing a circuit function. The on-die parametric test module is formed on the semiconductor substrate in a portion of the die area different from the IC portion. The on-die parametric test module includes a reference layout that provides at least one active reference MOS transistor, wherein the active reference MOS transistor has a reference spacing value for each of a plurality of context dependent effect parameters. A plurality of different variant layouts are included on the on-die parametric test module. Each variant layout provides at least one active variant MOS transistor that provides a variation with respect to the reference spacing value for at least one of the context dependent effect parameters. |
申请公布号 |
US8664968(B2) |
申请公布日期 |
2014.03.04 |
申请号 |
US20100890146 |
申请日期 |
2010.09.24 |
申请人 |
BALDWIN GREGORY CHARLES;ATON THOMAS J.;SADRA KAYVAN;OLUBUYIDE OLUWAMUYIWA OLUWAGBEMIGA;CHOI YOUN SUNG;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BALDWIN GREGORY CHARLES;ATON THOMAS J.;SADRA KAYVAN;OLUBUYIDE OLUWAMUYIWA OLUWAGBEMIGA;CHOI YOUN SUNG |
分类号 |
G01R31/3187 |
主分类号 |
G01R31/3187 |
代理机构 |
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代理人 |
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地址 |
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