发明名称 HIGH PURITY GRANULAR SILICON AND METHOD OF MANUFACTURING THE SAME
摘要 A method of making a high-purity semiconductor grade granular silicon composition is disclosed. Commercial quantities of the granular silicon can be produced by depositing silicon on silicon seeds in a first chemical vapor deposition (CVD)reactor, thereby growing the seeds into larger secondary seeds. Additional silicon is deposited on the secondary seeds in a second CVD reactor by flowing a gas comprising at least about 7 mole percent of a silicon compound through the second reactor. Dust is reduced in a third reactor. The methods disclosed herein can be used to achieve higher throughput and better yield than conventional practices.
申请公布号 KR101370104(B1) 申请公布日期 2014.03.04
申请号 KR20127007690 申请日期 2005.11.10
申请人 发明人
分类号 C01B33/02;C23C16/24;C23C16/442;C30B29/06 主分类号 C01B33/02
代理机构 代理人
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